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Ultrahigh-speed 1.5 mu m narrow-contact planar BH-DFB lasers which have a lightly-doped InP buried layer are developed. A cutoff frequency as high as 16.5 GHz is achieved at 80 mA. This excellent high-speed performance is attained by reducing the chip parasitic capacitance and by detuning the oscillating wavelength to be lower than the gain peak. Main contributions to the capacitance reduction are the lightly-doped buried layer and a very narrow p-electrode contact.