By Topic

Ultrahigh-speed 1.5 mu m narrow-contact planar BH-DFB lasers with 16.5 GHz cutoff frequency

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
T. Matsuyama ; Toshiba Electron. Eng. Corp., Yokohama, Japan ; H. Kobayashi ; A. Makuta ; K. Ohtsuka
more authors

Ultrahigh-speed 1.5 mu m narrow-contact planar BH-DFB lasers which have a lightly-doped InP buried layer are developed. A cutoff frequency as high as 16.5 GHz is achieved at 80 mA. This excellent high-speed performance is attained by reducing the chip parasitic capacitance and by detuning the oscillating wavelength to be lower than the gain peak. Main contributions to the capacitance reduction are the lightly-doped buried layer and a very narrow p-electrode contact.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 24 )