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Optical receiver array in silicon bipolar technology with selfaligned, low parasitic III/V detectors for DC-1 Gbit/s parallel links

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7 Author(s)
Weiland, J. ; Swiss Federal Inst. of Technol., Zurich, Switzerland ; Melchior, H. ; Kearley, M.Q. ; Morris, C.R.
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A 1*8 element III-V photodetector/silicon bipolar circuit receiver array has been fabricated using a selfaligning, low parasitic, flipchip solder bond hybridisation process. Receiver elements operate at data rates up to 1 Gbit/s with an input sensitivity of -23 dBm at 1.3 mu m wavelength, and with negligible interchannel crosstalk. An overall delay of 1.5 ns was measured between optical input and digital output.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 24 )