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RF small-signal and power characterization of AlGaN/GaN HEMTs

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4 Author(s)
Fox, A. ; Inst. of Thin Films & Interfaces, Res. Centre Julich, Germany ; Marso, M. ; Javorka, P. ; Kordos, P.

S-parameter and load pull measurements are used to characterize the properties of AlGaN/GaN HEMTs grown on sapphire or silicon substrates. From the small signal data it follows that the cut-off frequencies fT and fmax increase with the number of fingers, i.e. with the gate width, because of reduced contribution of parasitics to the total gate capacitance. Load-pull measurement setup is described and results of the output power, gain and PAE at 7 GHz are shown.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002