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Profiling of a GaAs structure using the probe method

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7 Author(s)
Kinder, R. ; Fac. of Electr. Eng., Slovak Univ. of Technol., Bratislava, Slovakia ; Srnánek, R. ; Walachova, J. ; Hulenyi, L.
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Determination of doping concentration profiles of GaAs on a bevelled surface by the probe method is presented. The bevelled structures were prepared by chemical etching. The results are compared with electrochemical capacitance-voltage technique. Some specific problems are discussed.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002

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