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Evaluation of δ-layer depth profiles detected on beveled semiconductor structures by micro Raman spectroscopy

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3 Author(s)
Rheinlander, B. ; Dept. of Semicond., Leipzig Univ., Germany ; Srnanek, R. ; Kovac, J.

The theoretical evaluation of the Raman intensities ratio of LO and TO phonons along the beveled GaAs structure containing Si δ-doped layer was performed. Excellent agreement with measured spectra was obtained.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002