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Modeling of the inverse base width modulation effect in SiGe base HBT for circuit simulation

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3 Author(s)
Pesic, T. ; Dept. of Microelectron., Nis Univ., Serbia ; Jankovic, Nebojsa ; Karamarkovic, J.

We describe the method of including the inverse base width modulation (IBWM) effect in the non-quasi static SiGe base HBT circuit model. Simulated results reveal that the IBWM effect has strong influence on the HBT electrical characteristics and must be taken into account for accurate modeling of SiGe HBTs.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002

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