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Optical gain in GaInNAs/GaAs multi-quantum well structures

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5 Author(s)
Kvietkova, J. ; Inst. fur Angewandte Phys., Univ. Karlsruhe, Munchen, Germany ; Hetterich, M. ; de Jauregui, D.S. ; Egorov, A.Yu.
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We present the experimental investigation of the optical gain in GaInNAs/GaAs multi-quantum well structures using the variable stripe length method. The amplified spontaneous edge emission was measured at different excitation intensities and stripe lengths. We observed an exponential increase in the edge emission intensity with increasing excitation density. The obtained values of the optical gain are typically in the order of 20 cm-1.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002

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