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The resolution of the capacitance-voltage (C-V) technique on single- and double-delta (δ)-doped GaAs is shown to be given by the breadth of dopant distribution. The experimental C-V profiles demonstrate that impurities are spatially localized on the length scale of the lattice constant. The sharp distribution of dopants is assessed by the secondary-ion mass spectroscopy.
Date of Conference: 14-16 Oct. 2002