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Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures

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2 Author(s)
Khlyap, G. ; Drogobych State Pedagogical Univ., Ukraine ; Sydorchuk, P.

Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A2B6 materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002

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