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Interactions between phases and thermal stability of TiBx(ZrBx)-n-SiC 6H contacts

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11 Author(s)
Boltovets, N.S. ; Sci. & Res. Inst. "Orion", Kiev, Ukraine ; Ivanov, V.N. ; Abdizhaliev, S.K. ; Konakova, R.V.
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We present the results of our investigations of morphological and electrical characteristics of TiBx(ZrBx)-n-SiC 6H (0001) surface-barrier structures. They were studied both before and after rapid thermal annealing (RTA) in vacuum at 1000°C for 90 s. The TiBx (ZrBx) films were obtained using magnetron sputtering from pressed targets of stoichiometric composition. It was shown that RTA changed neither the contact layered structure nor the abrupt shape of the interface, and the contact barrier properties were retained.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002