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Thermal resistance of the semiconductor structures for a photomixing device

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5 Author(s)
Darmo, J. ; Max-Planck-Inst. fur Radioastronomie, Bonn, Germany ; Schafer, F. ; Forster, A. ; Kordos, P.
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The thermal resistance of layered semiconductor systems intended to be used for GaAs-based photomixing devices is studied. Layered systems with nonstoichiometric GaAs on the substrate exhibit an increase of thermal resistance of about 33%, while using a thin AlAs/GaAs multilayer structure leads to a thermal resistance only 10% larger than the thermal resistance of the GaAs substrate. The results are discussed with respect to the heat dissipation and implications for the photomixer device.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002