The design principles of a mass-produced surface micromachined gyroscope are described. The device is integrated on a single 3 mm×3 mm chip with a 3-μm BiCMOS process. It has a 4-μm-thick polysilicon structure, 5-V 6-mA supply, 12.5-mV/°/S sensitivity, 10 000:1 dynamic range, 30 000-gee shock survival, and -55°C to +85°C operating temperature.
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:37
,
Issue:
12
)
Date of Publication: Dec 2002