InP/GaInAsP guided-wave phase modulators based on carrier-induced effects: theory and experiment

An overview of the different contributions due to carrier-induced effects that appear in InP/GaInAsP guided-wave phase modulators is given. The authors review and calculate the band-filling effect in such devices and point out optimized structures. The fabrication of phase modulators and directional coupler switches based on a GaInAsP/InP heterostructure is described. These devices exhibit modulation characteristics in good agreement with the calculations having a phase modulation efficiency as high as 11 degrees /V mm and low optical losses.<
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