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InP/GaInAsP guided-wave phase modulators based on carrier-induced effects: theory and experiment

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5 Author(s)
Vinchant, J.-F. ; Lab. d''Electron. Philips, Limeil-Brevannes, France ; Cavailles, J.A. ; Erman, M. ; Jarry, P.
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An overview of the different contributions due to carrier-induced effects that appear in InP/GaInAsP guided-wave phase modulators is given. The authors review and calculate the band-filling effect in such devices and point out optimized structures. The fabrication of phase modulators and directional coupler switches based on a GaInAsP/InP heterostructure is described. These devices exhibit modulation characteristics in good agreement with the calculations having a phase modulation efficiency as high as 11°/V mm and low optical losses

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Lightwave Technology, Journal of  (Volume:10 ,  Issue: 1 )