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This paper describes a new method of measuring the effective decay time of excess minority carriers in the base of junction transistors, the results of which show an approximately exponential decay with time. The relation between the decay-time constant and the normal and inverse transistor parameters is discussed, and it is shown how the experimental measurements can be directly applied to the design of transistor pulse circuits. Using the Ebers and Moll equivalent circuit for a saturated transistor, an analysis is made of the effect on the charge storage caused by the passage of a collector current when the base connection is open circuit. The case of a transient collector current is also examined, and it is concluded that for typical alloy junction transistors the passage of a collector current plays little part in determining the charge storage. Thus, the storage time with open-circuit base is determined by the initial excess charge, the collector current existing when the transistor enters the active region, and the decay time constant for minority carriers. A simple equivalent circuit for determining the decay of stored charge when a reverse base current is applied is also discussed.