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Calculation of contact currents in device simulation

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3 Author(s)
Nanz, G. ; Inst. for Microelectron., Tech. Univ. Vienna, Austria ; Dickinger, P. ; Selberherr, S.

The authors present an accurate new method for the calculation of the contact currents in a device simulation program which is applicable to arbitrarily shaped device geometries. The method is based on the evaluation of a volume integral of the calculated current densities over the whole device area with a suitably chosen weight function. Different types of weight functions are discussed and compared with the commonly used line integral along the contact. The results are illustrated by three examples: an I2L memory cell, an MOS transistor, and a resistor with a reverse-biased diode

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:11 ,  Issue: 1 )