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Bipolar - JFET - MOSFET negative resistance devices

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3 Author(s)

A systematic method is given for generating negative-resistance circuits made of 2 transistors and linear positive resistors only. The 2 transistors may be bioolar ( n-p-n or p-n-p ), JFET ( n -channel or p-channel), MOSFET ( n -channel or p -channel), or their combinations. Since the circuits do not require an internal power supply, they are passive and can be integrated as a two-terminal device in monolithic form. Two algorithms are given for generating a negative-resistance device which exhibits either a type- N \upsilon - i characteristic similar to that of a tunnel diode, or a type- S \upsilon -i characteristic similar to that of a four-layered p-n-p-n diode. Hundreds of new and potentially useful negative resistance devices have been discovered. A selected catalog of many such prototype negative-resistance devices is included for future applications.

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Circuits and Systems, IEEE Transactions on  (Volume:32 ,  Issue: 1 )