Bipolar - JFET - MOSFET negative resistance devices

A systematic method is given for generating negative-resistance circuits made of 2 transistors and linear positive resistors only. The 2 transistors may be bioolar (
n-p-n
or
p-n-p
),
JFET
(
n
-channel or p-channel),
MOSFET
(
n
-channel or
p
-channel), or their combinations. Since the circuits do not require an internal power supply, they are passive and can be integrated as a two-terminal device in monolithic form. Two algorithms are given for generating a negative-resistance device which exhibits either a type-
N
\upsilon - i
characteristic similar to that of a tunnel diode, or a type-
S
\upsilon -i
characteristic similar to that of a four-layered
p-n-p-n
diode. Hundreds of new and potentially useful negative resistance devices have been discovered. A selected catalog of many such prototype negative-resistance devices is included for future applications.