By Topic

Collector amplitude modulation of the class E tuned power amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)

In the class E high-efficiency switching-mode tuned power amplifier, the RF output amplitude is almost exactly a linear function of the collector dc supply voltage, since conduction angles and wave shapes are not changed by the dc supply voltage. Thus the RF output can be amplitude-modulated by varying the dc supply voltage in accordance with desired amplitude-modulation (AM) envelope. Deviations from the ideal linear modulation characteristic are caused by: transistor saturation voltage; RF feedthrough from the driver via C_{cb} ; nonunity transmission of the ac modulating signal into the amplifier through the nonzero inductance of the collector shuntfeed RF choke; and differences in the magnitudes and delay times, of the RF transmission function through the RF output network, of three different frequencies: lower sideband, carrier, and upper sideband. Design criteria are given, to hold the modulation distortion below a limit chosen by the designer. Experimental results agree well with analytical predictions. Distortion of the modulation envelope can easily be held below 1 percent.

Published in:

Circuits and Systems, IEEE Transactions on  (Volume:31 ,  Issue: 6 )