By Topic

Frequency Response of Theoretical Models of Junction Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)

For a grown-junction transistor, the concept of a constant base-spreading resistance may not be valid at high frequencies, owing to the distributed nature of the transistor parameters in the transverse direction of the base. However, results of a theoretical analysis of an appropriate two-dimensional model have shown that this type of transistor may be represented by the same type of model as that normally used for the fused-junction transistor, but with the constant base spreading resistance of the latter model replaced by a complex frequency-dependent base impedance. These two types of models represent limiting cases which should be useful for calculating circuit performance of practical junction transistors. In this paper, a method of comparing circuit performance of these two types of transistor models is described for both grounded-base and grounded-emitter configuration, using the series-parallel, or h, parameters. Under simplifying conditions, either type of transistor model in either configuration can be described by three normalized functions of frequency relative to \alpha -cutoff frequency plus three additional constants. Simple relations are shown to exist between grounded-base and grounded-emitter parameters. Polynomial representations are given for the h parameters for both grounded-base and grounded-emitter operation, and simplified equivalent circuits are presented. To illustrate this method of circuit analysis, numerical examples are given for power gain and input resistance for a one-stage amplifier terminated in a pure resistance. Finally, the subject of maximum available power gain also is discussed briefly.

Published in:

Circuit Theory, IRE Transactions on  (Volume:2 ,  Issue: 2 )