By Topic

Calculation of the capacitance coefficients of planar conductors on a dielectric surface

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)

A program for evaluation of parasitic capacitances of thinfilm conductors deposited on a dielectric substrate is described. The conductors can be of an arbitrary manhattan-type geometry and can be deposited on either side of the substrate. The dielectric substrate may have a metal backing. All the mutual and self-capacitances are computed. The method is inherently more accurate and faster than existing programs. The method involves subdivisions of the conductors into rectangles. A charge distribution with undefined parameters is assumed over each rectangle. The parameters of this distribution are forced to assume such values that the potential is constant across each conductor. The capacitances are computed from the resultant charges and potentials.

Published in:

Circuit Theory, IEEE Transactions on  (Volume:20 ,  Issue: 6 )