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A program for evaluation of parasitic capacitances of thinfilm conductors deposited on a dielectric substrate is described. The conductors can be of an arbitrary manhattan-type geometry and can be deposited on either side of the substrate. The dielectric substrate may have a metal backing. All the mutual and self-capacitances are computed. The method is inherently more accurate and faster than existing programs. The method involves subdivisions of the conductors into rectangles. A charge distribution with undefined parameters is assumed over each rectangle. The parameters of this distribution are forced to assume such values that the potential is constant across each conductor. The capacitances are computed from the resultant charges and potentials.