Cart (Loading....) | Create Account
Close category search window

Capacitance control of the Al/TiW/amorphous-Si system by rapid thermal processing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Berger, S. ; Dept. of Mater. Eng., Technion, Haifa, Israel ; Komen, Y. ; Weiss, B.Z.

Rapid thermal processing (RTP) of the Al/TiW/amorphous-Si system results in a decrease of the capacitance by about order of magnitude when the temperature is increased from 300 to 500°C. The general characteristics of the functions, capacitance versus applied voltage and versus applied frequency, remains the same in this range of temperatures. Rapid thermal processing can be used to control the gradual decrease of the capacitance of the Al/TiW/amorphous-Si system by up to approximately one order of magnitude without changing the general characteristic of the C-V curves

Published in:

Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 1 )

Date of Publication:

Jan 1992

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.