Capacitance control of the Al/TiW/amorphous-Si system by rapid thermal processing

Rapid thermal processing (RTP) of the Al/TiW/amorphous-Si system results in a decrease of the capacitance by about order of magnitude when the temperature is increased from 300 to 500 degrees C. The general characteristics of the functions, capacitance versus applied voltage and versus applied frequency, remains the same in this range of temperatures. Rapid thermal processing can be used to control the gradual decrease of the capacitance of the Al/TiW/amorphous-Si system by up to approximately one order of magnitude without changing the general characteristic of the C-V curves.<
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