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Rapid isothermal processing for fabrication of GaAs-based electronic devices [HBTs]

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7 Author(s)
Pearton, Stephen J. ; AT&T Bell Lab., Murray Hill, NJ, USA ; Ren, Fan ; Katz, A. ; Fullowan, T.R.
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The use of rapid isothermal processing (RIP) is detailed for each of the three annealing steps in the fabrication of heterostructure-based devices such as heterojunction bipolar transistors (HBTs). RIP can be used for the alloying of ohmic metal contacts, annealing of ion-bombarded regions for device isolation or parasitic capacitance reduction, and for conventional implant activation annealing. High-speed (fT=65 GHz) HBTs were achieved using RIP for all of the required heating steps. The authors compare the use of several types of silicon carbide-coated graphite susceptors for eliminating slip formation on 2- and 3-in-diameter GaAs wafers during high-temperature implant activation annealing

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Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 1 )