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An analytical two-dimensional simulation for the GaAs MESFET drain-induced barrier lowering: a short-channel effect

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3 Author(s)
Chang, Chian-Sern ; Avantek Inc., Santa Clara, CA, USA ; Day, D.-Y.S. ; Chan, S.

An analytic model for simulating the GaAs MESFET drain-induced barrier lowering and its effect on device performance are discussed. The potential barrier between the source and drain of a field-effect transistor in or near the subthreshold region is lowered by increasing the drain voltage. As the barrier is lowered to be comparable to the thermal energy, an appreciable current will flow through the channel, and the device will begin to conduct. This effect causes the threshold-voltage-control problem and degrades the device performance

Published in:

Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 5 )

Date of Publication:

May 1990

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