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Theory of high gain transient energy transfer in GaAs and Si

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3 Author(s)
G. C. Valley ; Hughes Res. Lab., Malibu, CA, USA ; J. Dubard ; A. L. Smirl

Rate equations for carrier number densities and wave equations for optical fields are solved numerically to investigate transient energy transfer (TET) from a strong pump beam to a weak probe via the free-carrier nonlinearity in GaAs and Si. The calculations of TET include arbitrary ratio of pulse length to diffusion time, pump depletion, free-carrier absorption, and two-photon absorption. The calculations provide guidance on the optimal choice of sample thickness, free-carrier cross section, and two-photon absorption coefficient for obtaining high TET gains in semiconductors

Published in:

IEEE Journal of Quantum Electronics  (Volume:26 ,  Issue: 6 )