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Browse Journals & Magazines > Electronics Letters ...> Volume:26 Issue:14 Help

Electrical properties of silicon dioxide deposited at low temperature by metal-organic microwave plasma CVD technique

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3 Author(s)
Ray, S.K. ; Dept. of Electron., India Inst. of Technol., Kharagpur, India ; Maiti, C.K. ; Chakrabarti, N.B.

Electrical properties of silicon dioxide films deposited on Si at low temperature by microwave plasma enhanced chemical vapour deposition using tetraethylorthosilicate and oxygen have been investigated. Properties of the films deposited on a thin thermal oxide and on an in-situ oxygen plasma treated silicon surface approach those of thermally grown oxide films.

Published in:
Electronics Letters  (Volume:26 ,  Issue: 14 )

Date of Publication: 5 July 1990

Page(s):
1082 - 1083
ISSN :
0013-5194
INSPEC Accession Number:
3709704
Digital Object Identifier :
10.1049/el:19900701
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
5 July 1990
Sponsored by :
Institution of Engineering and Technology

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