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Low loss optical rigde waveguides in a strained GeSi epitaxial layer grown on silicon

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5 Author(s)
Splett, A. ; Tech. Univ. Berlin, West Germany ; Schuppert, B. ; Petermann, K. ; Kasper, E.
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The realisation of single-mode ridge waveguides in a strained Si1-xGex epitaxial layer grown on silicon by MBE is reported. Measurements at lambda =1.3 mu m yield a refractive index enhancement of 2.2*10-3 for x=0.01 and waveguide losses around 3-5 dB/cm.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 14 )