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GaAs-GaAsSb based heterojunction bipolar transistor

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2 Author(s)
B. Khamsehpour ; Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK ; K. E. Singer

The fabrication of the first GaAs-GaAsSb based heterojunction bipolar transistor is reported. Maximum current gains of 25 at a base current of 1 mA have been measured on devices employing a p-type 1000 AA GaAs0.93Sb0.07 base doped at 1*1019 cm-3 and GaAs emitter and collector regions with graded heterointerfaces. At present, devices so fabricated show unstable behaviour.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 14 )