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Improved responsivity and sensitivity characteristics of the thin-film bismuth bolometer

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2 Author(s)
Block, W. ; University of Ilinois, Urbana, IL, USA ; Gaddy, O.L.

A new design for the nanosecond response time room-temperature thin-film bismuth bolometer has resulted in much improved responsivity and sensitivity characteristics. A responsivity of2.20 times 10^{-2}V/W and a sensitivity (NEP) of5.0 times 10^{-8}W/Hz1/2is reported. This is an improvement by a factor of 45 for the responsivity and a factor of 70 for the sensitivity over that previously reported for the bismuth-silver bolometer.

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Quantum Electronics, IEEE Journal of  (Volume:9 ,  Issue: 2 )