By Topic

Gradual degradation of GaAs double-heterostructure lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Newman, D. ; British Post Office Research Department, Martlesham Heath, Ipswich, Suffold, England ; Ritchie, S.

Measurements have been made in the manner in which device parameters vary during forward-biased operation of GaAs double-heterostructure lasers. The threshold current increases, but the slope external efficiency remains relatively constant. A conclusion is that optically absorbing or scattering centers are not the cause of degradation. The increase of threshold is attributed to an increasing nonradiative recombination component, the defect responsible for which is not yet determined. The important question regarding the role of optical flux is examined and it is shown that this is not the cause of the observed degradation in device characteristics.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:9 ,  Issue: 2 )