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Pulse modulation of DH-(GaAl)As lasers

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2 Author(s)
T. Ozeki ; Toshiba Research and Development Center, Kawasaki, Japan ; T. Ito

The pulse modulation of DH-(GaAl)As lasers at a bit rate of 200 Mbits/s was examined. To reduce the variation of the lasing pulse peak and lasing delay time due to combinations of "1" and "0" bits, prepumping condition and the damped oscillation parameters are important. The spontaneous carrier life time of DH-(GaAl)As lasers was measured as 2-5 ns.

Published in:

IEEE Journal of Quantum Electronics  (Volume:9 ,  Issue: 2 )