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Photoexcited resonance-enhanced nitrogen-trap GaAs1-xPx:N laser

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6 Author(s)
Holonyak, N. ; University of Illinois, Urbana, IL, USA ; Dupuis, Russell D. ; Macksey, H. ; Zack, G.
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Data (77 K) onx = 0.41andx = 0.46N-doped GaAS1-xPxare presented showing that the electron-hole recombination probability may be resonantly enhanced when the crystal composition is varied and theGammaconduction band minimum is made degenerate, or nearly degenerate, with theA-line N isoelectronic trap state (E_{Gamma} approx E_{N} sim 2.0eV,x approx 0.40). Data onx = 0.46GaAs1-xPx:N suggest that resonant enhancement occurs in a "turning" range|E_{Gamma} - E_{N}| leq 55meV. A consequence of this work is that photopumped GaAs1-xPx:N (x = 0.46) exhibits laser operation at the unusually high photon energy of 2.032 eV (6100 Å, orange). The idea of resonance-enhanced recombination and the results now demonstrated in GaAs1-xPx:N are general enough to be applicable also to p-n junctions.

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Quantum Electronics, IEEE Journal of  (Volume:9 ,  Issue: 2 )