By Topic

Photoexcited resonance-enhanced nitrogen-trap GaAs1-xPx:N laser

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Holonyak, N. ; University of Illinois, Urbana, IL, USA ; Dupuis, Russell D. ; Macksey, H. ; Zack, G.
more authors

Data (77 K) on x = 0.41 and x = 0.46 N-doped GaAS1-xPxare presented showing that the electron-hole recombination probability may be resonantly enhanced when the crystal composition is varied and the \Gamma conduction band minimum is made degenerate, or nearly degenerate, with the A -line N isoelectronic trap state ( E_{\Gamma } \approx E_{N} \sim 2.0 eV, x \approx 0.40 ). Data on x = 0.46 GaAs1-xPx:N suggest that resonant enhancement occurs in a "turning" range |E_{\Gamma } - E_{N}| \leq 55 meV. A consequence of this work is that photopumped GaAs1-xPx:N ( x = 0.46 ) exhibits laser operation at the unusually high photon energy of 2.032 eV (6100 Å, orange). The idea of resonance-enhanced recombination and the results now demonstrated in GaAs1-xPx:N are general enough to be applicable also to p-n junctions.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:9 ,  Issue: 2 )