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Behavior of threshold current and polarization of stimulated emission of GaAs injection lasers under uniaxial stress

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3 Author(s)
Patel, N. ; Universidade Estadual de Campinas, Campinas, Sao Paulo, Brazil ; Ripper, J. ; Brosson, P.

The effect of uniaxial pressure perpendicular to the junction on the threshold current of GaAs double-heterostructure lasers and homostructure lasers operated at room temperature was studied. The threshold either first increases with pressure up to a certain critical pressure Poand then decreases, or decreases with pressure from the beginning, depending on whether the laser is operating in a TE or a TM mode with zero pressure. In the first case, the change in the threshold current behavior at Pois accompanied by a change of modes from TE to TM. This behavior is explained by a model, taking into account the splitting of the valence bands of GaAs on application of uniaxial pressure.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:9 ,  Issue: 2 )

Date of Publication:

Feb 1973

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