By Topic

Behavior of threshold current and polarization of stimulated emission of GaAs injection lasers under uniaxial stress

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Patel, N. ; Universidade Estadual de Campinas, Campinas, Sao Paulo, Brazil ; Ripper, J. ; Brosson, P.

The effect of uniaxial pressure perpendicular to the junction on the threshold current of GaAs double-heterostructure lasers and homostructure lasers operated at room temperature was studied. The threshold either first increases with pressure up to a certain critical pressure Poand then decreases, or decreases with pressure from the beginning, depending on whether the laser is operating in a TE or a TM mode with zero pressure. In the first case, the change in the threshold current behavior at Pois accompanied by a change of modes from TE to TM. This behavior is explained by a model, taking into account the splitting of the valence bands of GaAs on application of uniaxial pressure.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:9 ,  Issue: 2 )