Additional data on the effect of doping on the lasing characteristics of GaAs AlxGa1-xAs double-heterostructure lasers

Lasing characteristics were measured for several double-heterostructure (DH) wafers with lower (
\lsim10^{16}
/cm
³
) and higher (
p \approx 10^{19}
/cm
³
) carrier concentrations to those that were reported previously by Pinkas et al. The new data give additional support to the assumption that the major lasing-loss mechanism is the free carrier absorption.