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Gigahertz cutoff frequency capabilities of CdHgTe photovoltaic detectors at 10.6 µ

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2 Author(s)
Verie, C. ; Centre National de la Recherche Scientifique, Bellevue, France ; Sirieix, M.

Using departure from stoichiometry, p-n junctions were prepared in CdxHg1-xTe withx simeq 0.20for the study of photovoltaic detection at 10.6 μ. In the final photodiodes, with sensitive areas between4 times 10^{-4}and 10-3cm2, values such as10^{5} Omegaand 8 pF have been observed at -0.1 V reverse bias for the shunt resistance and capacitance at 77°K. The CO2laser detection characteristics were investigated, leading to 1010< D*(10.6 μ, 1800 Hz, 1 Hz)leq 5 times 10^{10}cm W-1Hz1/2, a frequency response flat up to 1 GHz, a heterodyne noise equivalent power (NEP) =8 times 10^{-20}W/Hz with l-mW local oscillator power. Studies as a function of the temperature indicated that substantial sensitivity can be obtained up to 135°K.

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Quantum Electronics, IEEE Journal of  (Volume:8 ,  Issue: 2 )