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Picosecond structure in self-pulsing GaAs injection lasers

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2 Author(s)
A. Smith ; IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA ; H. Edmonds

Partial mode locking has been observed in self-pulsing GaAs injection lasers using an optical correlation technique. The lasers are operated at room temperature and the self-pulsing occurs near the end of the injection current pulse. The pulsewidths are about 4 ps, which are the shortest observed in an injection laser.

Published in:

IEEE Journal of Quantum Electronics  (Volume:7 ,  Issue: 2 )