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Performance of broad-band microwave-biased extrinsic photoconductive detectors at 10.6 µ

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2 Author(s)
Sun, C. ; RCA Electronic Components, David Sarnoff Research Center, Princeton, NJ, USA ; Walsh, T.E.

An analysis of the photoconductive gain-bandwidth product and SNR is presented, which allows a comparison of microwave-biased and dc-biased extrinsic detectors. The results of an experimental comparison using mercury-doped germanium at 10.6 μ are described. For equal bandwidth of 70 MHz, the measured gain and detectivity were better by a factor of 35 for microwave biasing compared to dc biasing.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:6 ,  Issue: 7 )

Date of Publication:

Jul 1970

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