Referenced Items are not available for this document.
Fabrication methods for integrated, GaAs-on-Quartz, Schottky based sideband generators and frequency multipliers operating at 200 GHz and 600 GHz are discussed. Important attributes include sub-micron anodes, air-bridged Schottky contacts, epitaxial layer bonding, low temperature (<200/spl deg/C) processing, and quasi-ohmic contacts. Photos of completed circuits and test results are presented.
Published in:
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Date of Conference: 26-26 Sept. 2002
- Page(s):
- 127 - 128
- Print ISBN:
- 0-7803-7423-1
- INSPEC Accession Number:
- 7548150
- Conference Location :
- San Diego, CA, USA
- Digital Object Identifier :
- 10.1109/ICIMW.2002.1076117
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