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Trench depth measurement system for VLSI DRAM's capacitor cells using optical fiber and michelson interferometer

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4 Author(s)
Takada, K. ; NTT Opto-Electronics Laboratories, Tokai, Ibaraki, Japan ; Chida, Kazunori ; Noda, J. ; Nakajima, S.

A simple method to precisely measure the trench depth of VLSI DRAM's capacitor cells is presented. The measurement system uses a Michelson interferometer and a white light source. The trench depth is transformed into the optical path difference between the central peak and one of sideband peaks produced during one-way scan of a mirror in a Michelson interferometer. The measurement error was withinpm0.2 mum for trench depths of2-5 mum. The multimode fiber used in the system facilitates wafer setup so that the system can be introduced into an in-process measurement system.

Published in:

Lightwave Technology, Journal of  (Volume:5 ,  Issue: 7 )

Date of Publication:

Jul 1987

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