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Sinusoidal and digital high-speed modulation of p-type substrate mass-transported diode lasers

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2 Author(s)
Tsang, D.Z. ; MIT Lincoln Laboratory, Lexington, MA, USA ; Liau, Z.L.

The modulation characteristics of GaInAsP diode lasers grown on p -type substrates have been studied on devices in which the parasitic bonding pads have been eliminated. The lasers have thresholds as low as 4.5 mA. The small-signal sinusoidal response is comparable to similar lasers made on n -type substrates. A small-signal -3-dB frequency as high as 16.4 GHz has been measured with a 175- μm-long laser. The laser responds to large-signal digital word sequences at rates of 16 Gbit/s.

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Lightwave Technology, Journal of  (Volume:5 ,  Issue: 3 )