By Topic

Band-tailing effects and the temperature dependence of radiative recombination in compensated epitaxial GaAs laser junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Winogradoff, N. ; Electron Devices Section, National Bureau of Standards, Washington, D.C., USA ; Neill, A., Jr.

The temperature dependence of the spectrum, threshold current, and power output of compensated vapor-grown epitaxial GaAs lasers and incoherent emitters near room temperature is presented. It was found that an increase in temperature produced a narrowing of the spontaneous emission spectrum. This narrowing has been attributed to a movement of the Fermi level through an exponential density-of-states tail.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:4 ,  Issue: 4 )