Band-tailing effects and the temperature dependence of radiative recombination in compensated epitaxial GaAs laser junctions

The temperature dependence of the spectrum, threshold current, and power output of compensated vapor-grown epitaxial GaAs lasers and incoherent emitters near room temperature is presented. It was found that an increase in temperature produced a narrowing of the spontaneous emission spectrum. This narrowing has been attributed to a movement of the Fermi level through an exponential density-of-states tail.