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Band-tailing effects and the temperature dependence of radiative recombination in compensated epitaxial GaAs laser junctions

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2 Author(s)
Winogradoff, N. ; Electron Devices Section, National Bureau of Standards, Washington, D.C., USA ; Neill, A., Jr.

The temperature dependence of the spectrum, threshold current, and power output of compensated vapor-grown epitaxial GaAs lasers and incoherent emitters near room temperature is presented. It was found that an increase in temperature produced a narrowing of the spontaneous emission spectrum. This narrowing has been attributed to a movement of the Fermi level through an exponential density-of-states tail.

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Quantum Electronics, IEEE Journal of  (Volume:4 ,  Issue: 4 )