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Recombination lifetime in a semiconductor laser diode

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1 Author(s)
Nishizawa, J. ; Tohoku University, Sendai, Japan

The effect of minority carrier lifetime on the impedance of the laser within a diffusion or a drift length from the junction is analyzed. Lifetime shorting due to stimulated recombination (which is a function of the injection current) is considered and the effect of cavity size on the ability to modulate the laser at high frequencies is pointed out.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:4 ,  Issue: 4 )