By Topic

Stimulated Raman scattering in gases and gain pressure dependence

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Alekseyev, V. ; Lebedev Physical Institute, Moscow, USSR ; Grasiuk, A. ; Ragulsky, V. ; Sobel'man, I.
more authors

The theory of broadening of Raman lines in molecular gases due to rotational relaxation has provided an explanation for the observed N2nonlinear pressure dependence of the stimulated Raman scattering gain. The theoretical results are in sufficient agreement with the experimental data.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:4 ,  Issue: 10 )