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Stimulated emission from Ga1-xAlxAs diodes at 77°K

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5 Author(s)
Rupprecht, H. ; IBM Watson Research Center, Yorktown Heights, NY, USA ; Woodall, J. ; Pettit, G. ; Crowe, J.
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Ga1-xAlxAs was found to be a suitable material for semiconductor lasers. Stimulated emission from Fabry-Perot type of diodes has been observed at 77°K and 273°K. The highest peak energy of the laser line at 77°K so far is 1.65 eV ( l = 7500 Å). The Ga1-xAlxAs material was obtained by a liquid phase epitaxial method, described in a previous paper.

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Quantum Electronics, IEEE Journal of  (Volume:4 ,  Issue: 1 )