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Low-threshold current AlGaAs/GaAs-distributed feedback laser grown by two-step molecular beam epitaxy

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5 Author(s)
Kojima, K. ; Mitsubishi Electric Corporation, Hyogo, Japan ; Noda, S. ; Mitsunaga, Kazumasa ; Kyuma, K.
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AlGaAs/GaAs-distributed feedback (DFB) lasers with oxide-stripe structure were fabricated by a two-step molecular beam epitaxial (MBE) growth for the first time. The large coupling coefficient of 90 cm-1and the threshold current as low as 165 mA at room temperature were obtained with the second-order gratings. The characteristic temperature T0was as high as 210 K. Single longitudinal-mode oscillation was observed up toI/I_{th} = 1.5and from 0 to 50°C without any mode hopping. The wavelength variation from device to device was ±5 Å. The dependence of the coupling coefficient on the device structure was calculated, and it was shown that MBE is much more advantageous than LPE to enhance the coupling coefficient.

Published in:

Lightwave Technology, Journal of  (Volume:4 ,  Issue: 5 )

Date of Publication:

May 1986

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