Cart (Loading....) | Create Account
Close category search window
 

Reduction of lasing threshold current density by the lowering of valence band effective mass

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Yablonovitch, E. ; University of California at Los Angeles, Los Angeles, CA, USA ; Kane, E.O.

In present day semiconductor lasers, there is a serious asymmetry between the very light conduction band mass and the very heavy valence band mass. Under laser threshold conditions, the hole occupation remains classical even while the electrons are degenerate. This results in a significant penalty in terms of threshold current density, carrier injection level, and excess Auger and other nonradiative recombination. We propose a combination of strain and quantum confinement to reduce the valence band effective mass and to lessen the laser threshold requirements.

Published in:

Lightwave Technology, Journal of  (Volume:4 ,  Issue: 5 )

Date of Publication:

May 1986

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.