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Monolithic four-channel photodiode/amplifier receiver array integrated on a GaAs substrate

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8 Author(s)
Wada, O. ; Fujitsu Limted, Morinosato-Wakamiya, Atsugi, Japan-1987 ; Hamaguchi, H. ; Makiuchi, M. ; Kumai, T.
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A four-channel optoelectronic integrated receiver array operating at the wavelength near 850 nm has been fabricated on a single GaAs substrate by using metal-semiconductor-metal (MSM) photodiodes (PD's) and metal-semiconductor field-effect transistors (MESFET's). The largest integration scale for a monolithic receiver and uniform characteristics among circuit channels have been achieved due to the structural simplicity and the process-compatibility of this array. Also, an extremely small capacitance of MSM-PD, 0.10 pF, has lead us to obtain a high-speed operation up to a bit rate of 1.5 Gbit/s, NRZ, and a low noise characteristic exhibiting an equivalent input noise current as small as 5 pA/Hz1/2. These results have indicated the suitability of MSM-PD/MESFET's circuits for large-scale multichannel optoelectronic integration of receivers.

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Lightwave Technology, Journal of  (Volume:4 ,  Issue: 11 )