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Direct measurement of infrared photo-elastic constants of silicon

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2 Author(s)
M. Pedinoff ; Hughes Research Labs., Malibu, CA, USA ; H. Seguin

The elasto-optic constants of single-crystal silicon were determined at 3.39μ, through measurement of the diffraction grating and transduction efficiency of an ultrasonic traveling-wave modulation device operating at 30 MHz. The values of elasto-optic constants found were P_{11} = 0.081, P_{12} = 0.010, P_{44} = 0.075 .

Published in:

IEEE Journal of Quantum Electronics  (Volume:3 ,  Issue: 1 )