By Topic

Monolithic optoelectronic integration: A new component technology for lightwave communications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
S. Forrest ; AT&T Bell Labs., Murray Hill, NJ, USA

We discuss recent advances in the field of optoelectronic device integration. Several problems and advantages associated with integration are illustrated by discussing in detail three device types which are currently undergoing intensive investigation: integrated laser transmitters, integrated p-i-n photodetector receivers, and arrays of individually addressable detectors and light emitters. Devices fabricated using either GaAs or InP-based material systems with application at wavelength of 0.82-0.87 \mu m and 1.3-1.55 \mu m, respectively, are considered. It is concluded that the pursuit of optoelectronic integration will lead to an increase in device functionality, an improvement in performance, and a reduction in cost of the integrated device as compared with its hybrid counterpart.

Published in:

Journal of Lightwave Technology  (Volume:3 ,  Issue: 6 )