Referenced Items are not available for this document.
A p-i-n photodiode bipolar optical receiver using a high beta polysilicon emitter transistor has been investigated. The receiver operates from a single 6-V supply, has a dynamic range in excess of 20 dB, and has been tested at bit rates up to 1 Gbit/s. At 280 Mbit/s and 1.3 μm the measured sensitivity was -35 dBm.
Published in:
Lightwave Technology, Journal of
(Volume:3
,
Issue:
3
)
Date of Publication: June 1985
- Page(s):
- 608 - 611
- ISSN :
- 0733-8724
- Digital Object Identifier :
- 10.1109/JLT.1985.1074220
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 January 2003
- Issue Date :
- June 1985
- Sponsored by :
- IEEE Aerospace and Electronic Systems Society
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