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A p-i-n photodiode bipolar optical receiver using a high beta polysilicon emitter transistor has been investigated. The receiver operates from a single 6-V supply, has a dynamic range in excess of 20 dB, and has been tested at bit rates up to 1 Gbit/s. At 280 Mbit/s and 1.3 μm the measured sensitivity was -35 dBm.
Date of Publication: June 1985