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Theoretical analysis and fabrication of antireflection coatings on laser-diode facets

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3 Author(s)
Saitoh, Tadashi ; NTT Basic Research Laboratories, Musashino-shi, Tokyo, Japan ; Mukai, Takaaki ; Mikami, Osamu

Reflectivity of an antireflection-(AR) coated laser-diode (LD) facet is analyzed on the basis of a slab waveguide model and an angular spectrum approach. The reflectivities of single- and double-layer AR coatings on 1.55-μm GaInAsP/InP LD's are numerically calculated. Optimum film parameters, such as thickness and refractive index of single-layer AR coating films, are obtained as functions of the active layer thickness. A minimum reflectivity as low as1 times 10^{-4}was realized using refractive index controlled SiOxfilm as an AR coating for a 1.55-μm GaInAsP/InP buried-heterostructure (BH) LD.

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Lightwave Technology, Journal of  (Volume:3 ,  Issue: 2 )